2004. 11. 26 1/3 semiconductor technical data KTC5242A triple diffused npn transistor revision no : 0 power amplifier applications. features high collector voltage : v ceo =230v(min.) complementary to kta1962a. recommended for 80w high fidelity audio frequency amplifier output stage. maximum rating (ta=25 ) 1. base 2. collector (heat sink) 3. emitter to-3p(n) c g l k h a d b e f i d p pt m j q 123 a 15.9 max millimeters dim b 4.8 max c 20.0 0.3 d 2.0 0.3 d 1.0+0.3/-0.25 e2.0 f 1.0 g 3.3 max h9.0 i4.5 j 2.0 k 1.8 max l 20.5 0.5 p 5.45 0.2 q 3.2 0.2 t 0.6+0.3/-0.1 2.8 m + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification r:55 110 , o:80 160 characteristic symbol rating unit collector-base voltage v cbo 230 v collector-emitter voltage v ceo 230 v emitter-base voltage v ebo 5 v collector current i c 15 a base current i b 1.5 a collector power dissipation (tc=25 ) p c 130 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =230v, i e =0 - - 5.0 a emitter cut-off current i ebo v eb =5v, i c =0 - - 5.0 a collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 230 - - v dc current gain h fe (1) (note) v ce =5v, i c =1a 55 - 160 h fe (2) v ce =5v, i c =7a 35 60 - collector-emitter saturation voltage v ce(sat) i c =8a, i b =0.8a - 0.4 3.0 v base-emitter voltage v be v ce =5v, i c =7a - 1.0 1.5 v transition frequency f t v ce =5v, i c =1a - 30 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 200 - pf
2004. 11. 26 2/3 KTC5242A revision no : 0 c collector current i (a) 0 0 collector-emitter voltage v (v) ce ce c i - v collector current i (a) dc current gain h 100 0.01 0.03 0.1 0.3 c fe 1k h - i base-emitter saturation collector current i (a) 0.01 0.03 0.1 0.3 c 0.03 be(sat) v - i collector-emitter saturation collector current i (a) collector current i (a) transition frequency f (mhz) 0.01 0.03 t 0.1 0.3 c f - i c ce(sat) v - i 2 4 6 8 10 12 14 16 2 4 6 8 10 12 common emitter ta=25 c i =20ma b 300 200 140 100 80 60 40 base-emitter voltage v (v) collector current i (a) 0 0 c be i - v cbe 0.4 0.8 1.2 1.6 2.0 3 6 9 12 common emitter v =5v ce ta=100 c ta=25 c t a= -25 c fe c 1 3 10 20 3 5 10 30 50 300 500 common emitter v =5v ce ta=100 c ta=25 c ta=-25 c ce(sat) c voltage v (v) 0.05 0.1 0.01 0.01 0.005 0.003 0.03 0.03 0.3 1 3 10 20 1 0.1 0.3 0.5 common emitter i /i =10 c b ta= -25 c ta=25 c ta=100 c be(sat) 1 3 10 20 0.05 0.1 0.3 0.5 1 3 5 10 common emitter i /i =10 c b ta=-25 c ta=25 c ta=100 c tc 1310 0.5 1 3 5 10 30 50 100 common emitter v =5v tc=25 c ce c voltage v (v)
2004. 11. 26 3/3 KTC5242A revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta transient thermal resistance th 1 0.1 0.01 0.001 pulse width t (s) w r - t p (w) 40 80 120 160 200 40 80 120 160 th w r ( c/w) curves should be applied in thermal limited area. (single nonrepetitive pulse) infinite heat sink no heat sink 1 2 10 100 1 k 0.01 0.1 1 10 50 1 2 tc=ta infinite heat sink safe operating area ce collector-emitter voltage v (v) 35 10 30 50 c 0.03 0.05 0.1 collector current i (a) 5 50 100 300 0.3 0.5 1 3 10 30 * single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c c i max (continuous) dc operatio n v max ceo 1ms* 10m s* 100ms* tc=2 5 c
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